Dry etching strategy of spin-transfer-torque magnetic random access memory: A review-Reference-Cited by-同舟云学术

Dry etching strategy of spin-transfer-torque magnetic random access memory: A review

Published:2020-09 Issue:5 Volume:38 Page:050801
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Islam Rabiul¹²³^ORCID,Cui Bo¹²,Miao Guo-Xing¹²³^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada

2. Waterloo Institute for Nanotechnology (WIN), University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada

3. Institute for Quantum Computing, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada

Funder

Natural Sciences and Engineering Research Council of Canada

Canada First Research Excellence Fund

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/6.0000205

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