Affiliation:
1. Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai, Japan
2. WPI-Advanced Institute for Materials Research, Tohoku University, Sendai, Japan
Funder
Japan Science and Technology Agency (JST)-Open Innovation Platform with Enterprises, Research Institute and Academia
MEXT Initiative to Establish Next-Generation Novel Integrated Circuits Centers
JSPS KAKENHI
KIOXIA Holdings Corporation
Cooperative Research Projects of Research Institute of Electrical Communication (RIEC), Tohoku University
Division for Interdisciplinary Advanced Research and Education (DIARE) of Tohoku University
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Reference27 articles.
1. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
2. 1 Gbit high density embedded STT-MRAM in 28 nm FDSOI technology;Lee
3. Manufacturable 22 nm FD-SOI embedded MRAM technology for industrial-grade MCU and IoT applications;Naik
4. 22 nm STT-MRAM for reflow and automotive uses with high yield, reliability, and magnetic immunity and with performance and shielding options;Gallagher
5. A reflow-capable, embedded 8 Mb STT-MRAM macro with 9 nS read access time in 16 nm FinFET logic CMOS process;Shih