Simulation of an Ar/O2/Cl2magnetized direct current discharge-Reference-Cited by-同舟云学术

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Simulation of an Ar/O2/Cl2magnetized direct current discharge

Published:2016-07-25 Issue:33 Volume:49 Page:335201
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Li Zhi,Zhao Zhen,Wu Chuan,Zhou Zhonghao

Funder

The National Natural Science Foundation of People’s Republic of China

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/49/i=33/a=335201/pdf

Reference56 articles.

1. Control of Etch Slope during Etching of Pt inAr/Cl2/O2Plasmas

2. Platinum etching using a TiO2 hard mask in an O2/Cl2/Ar plasma

3. Selective etching of GaN over AlN using an inductively coupled plasma and an O2/Cl2/Ar chemistry

4. Highly selective dry etching of III nitrides using an inductively coupled Cl[sub 2]/Ar/O[sub 2] plasma

5. Comparison of model and experiment for Ar, Ar/O2and Ar/O2/Cl2inductively coupled plasmas

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