Selective etching of GaN over AlN using an inductively coupled plasma and an O2/Cl2/Ar chemistry-Reference-Cited by-同舟云学术

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Selective etching of GaN over AlN using an inductively coupled plasma and an O2/Cl2/Ar chemistry

Published:2000-05 Issue:3 Volume:18 Page:879-881
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Smith S. A.,Lampert W. V.,Rajagopal P.,Banks A. D.,Thomson D.,Davis R. F.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.582270

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hybrid simulation of radio frequency biased inductively coupled Ar/O<sub>2</sub>/Cl<sub>2</sub> plasmas;Acta Physica Sinica;2024

2. NH3/N2 plasma treatment on etched AlGaN surface for high-performance p-GaN HEMTs fabrication;Materials Science in Semiconductor Processing;2023-11

3. Suppression of Reverse Leakage in Enhancement‐Mode GaN High‐Electron‐Mobility Transistor by Extended PGaN Technology;physica status solidi (a);2023-05-31

4. Removal of GaN film over AlGaN with inductively coupled BCl3/Ar atomic layer etch;Chinese Physics B;2022-01-01

5. Selective etching of p-GaN over Al0.25Ga0.75N in Cl2/Ar/O2 ICP plasma for fabrication of normally-off GaN HEMTs;Materials Science in Semiconductor Processing;2021-02

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