Development of Silicon Carbide Atomic Layer Etching Technology-Reference-Cited by-同舟云学术

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Development of Silicon Carbide Atomic Layer Etching Technology

Published:2020-08 Issue: Volume:707 Page:138084
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Lee Kang-Il,Seok Dong Chan,Jang Soo Ouk,Choi Yong Sup

Funder

NFRI

NST

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Silicon carbide and diamond for high temperature device applications;Willander;J Mater Sci: Mater Electron,2006

2. Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface;Yamamura;CIRP Annals - Manufacturing Technology,2011

3. Rapid damage free shaping of silicon carbide using Reactive Atom Plasma (RAP) processing;Verma,2006

4. The surface morphology of the polycrystalline and single-crystal SiC treated with pure NF3 plasma and analysis on chemical reaction of SiC with NF3;Takatsugu;ECS Transactions,2007

5. Preliminary Study on Chemical Figuring and Finishing of Sintered SiC Substrate Using Atmospheric Pressure Plasma;Yamamura;Procedia CIRP,2012

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bias-pulsed atomic layer etching of 4H-silicon carbide producing subangstrom surface roughness;Journal of Vacuum Science & Technology A;2023-05-01

2. Ion beam figuring with focused anode layer thruster;Review of Scientific Instruments;2022-06-01

3. Purity Evaluation of Highly Oriented Cubic Silicon Carbide Using Micro-Raman Spectroscopy;Transactions on Electrical and Electronic Materials;2022-04-27

4. Defect-Induced Luminescence Quenching of 4H-SiC Single Crystal Grown by PVT Method through a Control of Incorporated Impurity Concentration;Compounds;2022-03-02

5. Recent Progress of Atomic Layer Technology in Spintronics: Mechanism, Materials and Prospects;Nanomaterials;2022-02-16

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