Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface
Author:
Publisher
Elsevier BV
Subject
Industrial and Manufacturing Engineering,Mechanical Engineering
Reference19 articles.
1. Chemomechanical Polishing of Silicon Carbide;Zhou;Journal of the Electrochemical Society,1997
2. Effects of Process Parameter Variations on the Removal Rate in Chemical Mechanical Polishing of 4H–SiC;Neslen;Journal of Electronic Materials,2001
3. Effects of Substrate Surface Preparation on Chemical Vapor Deposition Growth of 4H–SiC Epitaxial Layers;Saddow;Journal of Electronic Materials,2001
4. Chemical and Mechanical Balance in Polishing of Electronic Materials for Defect-Free Surfaces;Lee;Annals of the CIRP,2009
5. Hybrid Polishing Mechanism of Single Crystal SiC Using Mixed Abrasive Slurry (MAS);Lee;Annals of the CIRP,2010
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