Morphology of the Surface of the Polycrystalline and Single-Crystal SiC Treated with pure NF3 Plasma and Analysis of Chemical Reaction of SiC with NF3

Abstract

SiC is a promising semiconductor material for use in high temperature and high power electronic device applications. In the semiconductor industry in Japan, a large amount of NF3 is now used as a dry etchant and a cleaner gas for CVD chambers. NF3 is chosen as a fluorine radical source, because it efficiently decomposes to from free radicals, and all possible reaction products are volatile.