Gas phase particle formation and elimination on Si (100) in low temperature reduced pressure chemical vapor deposition silicon-based epitaxial layers-Reference-Cited by-同舟云学术

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Gas phase particle formation and elimination on Si (100) in low temperature reduced pressure chemical vapor deposition silicon-based epitaxial layers

Published:2012-02 Issue:8 Volume:520 Page:3190-3194
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Shinriki Manabu,Chung Keith,Hasaka Satoshi,Brabant Paul,He Hong,Adam Thomas N.,Sadana Devendra

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Substitutional carbon incorporation in epitaxial Si1−yCy layers grown by chemical vapor deposition

2. The high growth rate of epitaxial silicon–carbon alloys by using chemical vapour deposition and neopentasilane

3. Highly tensile strained silicon–carbon alloys epitaxially grown into recessed source drain areas of NMOS devices

4. Chemical Vapor Deposition Epitaxy of Silicon and Silicon-Carbon Alloys at High Rates and Low Temperatures using Neopentasilane

5. SiCP Selective Epitaxial Growth in Recessed Source/Drain Regions yielding to Drive Current Enhancement in n-channel MOSFET

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3. Epitaxial Growth of Si and SiGe Using High-Order Silanes without a Carrier Gas at Low Temperatures via UHVCVD and LPCVD;Coatings;2021-05-13

4. Comparison of high-order silanes and island formation phenomena during SiGe epitaxy at 500 °C;Journal of the Korean Physical Society;2021-03-29

5. Very low temperature growth of GeSi alloys with digermane, disilane and dichlorosilane;Journal of Crystal Growth;2020-09

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