SiCP Selective Epitaxial Growth in Recessed Source/Drain Regions yielding to Drive Current Enhancement in n-channel MOSFET-Reference-Cited by-同舟云学术

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SiCP Selective Epitaxial Growth in Recessed Source/Drain Regions yielding to Drive Current Enhancement in n-channel MOSFET

Published:2019-12-18 Issue:10 Volume:16 Page:1001-1013
ISSN:1938-6737
Container-title:ECS Transactions
language:
Short-container-title:ECS Trans.

Author:

Bauer Matthias,Machkaoutsan Vladimir,Zhang Yangting,Weeks Doran,Spear Jennifer,Thomas Shawn,Verheyen Peter,Kerner C.,Clemente F.,Bender Hugo,Shamiryan D.,Loo Roger,Hikavyy A.,Hoffmann T.,Absil Philipe,Biesemans Serge

Publisher

The Electrochemical Society

Link

https://iopscience.iop.org/article/10.1149/1.2986862/pdf

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Benchmark of 300mm RP-CVD Chambers for the Low Temperature Epitaxy of Si and SiGe;ECS Transactions;2018-07-20

2. (Invited) Selective Epitaxial Growth of High-P Si:P for Source/Drain Formation in Advanced Si nFETs;ECS Transactions;2016-09-23

3. Characterization of Epitaxial Si:C:P and Si:P Layers for Source/Drain Formation in Advanced Bulk FinFETs;ECS Transactions;2014-08-12

4. Group IV Materials;Handbook of Silicon Photonics;2013-04-09

5. High Efficiency Low Temperature Pre-epi Clean Method for Advanced Group IV epi Processing;ECS Transactions;2013-03-15

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