On the mobility, turn-on characteristics and activation energy of polycrystalline silicon thin-film transistors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Analysis of current voltage characteristics of low-temperature-processed polysilicon thin-film transistors
2. A model of current—Voltage characteristics in polycrystalline silicon thin-film transistors
3. A quasi-two-dimensional analytical model for the turn-on characteristics of polysilicon thin-film transistors
4. An analytical moderate inversion drain current model for polycrystalline silicon thin‐film transistors considering deep and tail states in the grain boundary
5. Modeling and characterization of polycrystalline-silicon thin-film transistors with a channel-length comparable to a grain size
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Explicit calculation for grain boundary barrier height in polysilicon TFTs based on quasi-two-dimensional approach;Solid-State Electronics;2013-09
2. A model of electrical conduction across the grain boundaries in polycrystalline-silicon thin film transistors and metal oxide semiconductor field effect transistors;Journal of Applied Physics;2009-07-15
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