Explicit calculation for grain boundary barrier height in polysilicon TFTs based on quasi-two-dimensional approach
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference21 articles.
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2. A quasi two-dimensional conduction model for polycrystalline silicon thin-film transistor based on discrete grains;Wong;IEEE Trans Electron Dev,2008
3. The electrical properties of polycrystalline silicon films;Seto;J Appl Phys,1975
4. On the mobility, turn-on characteristics and activation energy of polycrystalline silicon thin-film transistors;Gupta;Thin Solid Films,2006
5. A quasi two-dimensional analytical model for the turn-on characteristics of polysilicon thin-film transistors;Lin;IEEE Trans Electron Dev,1990
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