A model of electrical conduction across the grain boundaries in polycrystalline-silicon thin film transistors and metal oxide semiconductor field effect transistors-Reference-Cited by-同舟云学术

A model of electrical conduction across the grain boundaries in polycrystalline-silicon thin film transistors and metal oxide semiconductor field effect transistors

Published:2009-07-15 Issue:2 Volume:106 Page:024504
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sharma Kiran,Joshi D. P.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3173179

Reference37 articles.

1. On-current modeling of large-grain polycrystalline silicon thin-film transistors

2. An analytical grain-barrier height model and its characterization for intrinsic poly-Si thin-film transistor

3. Modeling of laser-annealed polysilicon TFT characteristics

4. The dc voltage dependence of semiconductor grain‐boundary resistance

5. Field-effect analysis for the determination of gap-state density and Fermi-level temperature dependence in polycrystalline silicon

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