Atmospheric-pressure metalorganic vapour phase epitaxy optimization of GaAsBi alloy-Reference-Cited by-同舟云学术

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Atmospheric-pressure metalorganic vapour phase epitaxy optimization of GaAsBi alloy

Published:2008-10 Issue:23 Volume:516 Page:8372-8376
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Moussa I.,Fitouri H.,Rebey A.,El Jani B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Temperature Dependence of GaAs1-xBixBand Gap Studied by Photoreflectance Spectroscopy

2. Lattice Distortion of GaAsBi Alloy Grown on GaAs by Molecular Beam Epitaxy

3. Characteristics of Semiconductor Alloy GaAs1-xBix

4. New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy

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1. Magnetothermal properties of two-dimensional electron gas in matched AlGaAs/GaABiN structure;Applied Physics A;2024-04-16

2. Theoretical study of adsorption of Bi on cation-rich InAs/(0 0 1) and InP(0 0 1))- ζ (4 × 2) reconstructed surfaces;Materials Science and Engineering: B;2024-04

3. X-ray absorption spectroscopy for lattice-matched and strain-relaxed GaAsPBi epi-layers on GaAs (001) substrates;CrystEngComm;2024

4. High verticality vapor–liquid–solid growth of GaAs_0.99Bi_0.01 nanowires using Ga–Bi assisted catalytic droplets;Nanoscale Advances;2024

5. First-principle investigations of structural, electronic, thermal, and mechanical properties of AlP1−xBix alloys;Journal of Molecular Modeling;2023-03-31

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