X-ray absorption spectroscopy for lattice-matched and strain-relaxed GaAsPBi epi-layers on GaAs (001) substrates-Reference-Cited by-同舟云学术

X-ray absorption spectroscopy for lattice-matched and strain-relaxed GaAsPBi epi-layers on GaAs (001) substrates

Published:2024 Issue:35 Volume:26 Page:4916-4923
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Chomdech Saharat¹^ORCID,Himwas Chalermchai¹^ORCID,Pumee Wenich¹,Kijamnajsuk Suphakan²,Tanthanuch Waraporn³,Kanjanachuchai Songphol¹^ORCID

Affiliation:

1. Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, 254 Phayathai Road, Bangkok 10330, Thailand

2. National Metal and Materials Technology Center, Thailand Science Park, 114 Paholyothin Rd., Klong 1, Klong Luang, Pathumthani 12120, Thailand

3. Synchrotron Light Research Institute (Public Organization), Muang, Nakhon Ratchasima 30000, Thailand

Abstract

Fourier transformed synchrotron-based extended X-ray absorption fine structure around the P-K edge for relaxed (left) and lattice-matched (right) GaAsPBi epitaxial layers. Insets show their corresponding surfaces probed by atomic force microscopy.

Funder

National Research Council of Thailand

Chulalongkorn University

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CE/D4CE00356J

Reference27 articles.

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