Effect of capping layer on the ferroelectricity of hafnium oxide-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Effect of capping layer on the ferroelectricity of hafnium oxide

Published:2022-07 Issue: Volume:753 Page:139274
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Chang Jui-Hsuan,Zheng Chen-Gui,Chen Hsuan-Han,Chen Pei-Tien,Liu Cun-Bo,Huang Kai-Yang,Hsu Hsiao-Hsuan,Cheng Chun-Hu,Chou Wu-Ching,Han Su-Ting

Funder

National Taipei University of Technology

Taiwan Ministry of Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Time-dependent negative capacitance effects in Al2O3/BaTiO3 bilayers;Kim;Nano Lett.,2016

2. Effect of zirconium or titanium component on electrical properties of PbZr1−xTixO3 gated negative capacitance ferroelectric field-effect transistors;Xiao;Mater. Res. Express,2016

3. A new metal–ferroelectric (PbZr0.53Ti0.47O3)–insulator (Dy2O3)–semiconductor (MFIS) FET for nonvolatile memory applications;Juan;IEEE Electron. Device Lett.,2006

4. Low-voltage steep turn-on p-MOSFET using ferroelectric high-k gate dielectric;Cheng;IEEE Electron. Device Lett.,2014

5. Low-leakage-current DRAM-like memory using a one-transistor ferroelectric MOSFET with a Hf-based gate dielectric;Cheng;IEEE Electron. Device Lett.,2014

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exploring Disturb Characteristics in 2D and 3D Ferroelectric NAND Memory Arrays for Next-Generation Memory Technology;ACS Applied Materials & Interfaces;2024-06-20

2. Ferroelectricity of Hf_0.5Zr_0.5O₂ Thin Film Induced at 350°C by Thermally Accelerated Nucleation During Atomic Layer Deposition;IEEE Transactions on Electron Devices;2024-04

3. HfAlO-based ferroelectric memristors for artificial synaptic plasticity;Frontiers of Physics;2023-09-20

4. A perspective on the physical scaling down of hafnia-based ferroelectrics;Nanotechnology;2023-02-28

5. Chemical potential gradient induced formation of Kirkendall voids at the epitaxial TiN/MgO interface;Nanoscale;2023

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3