Time-Dependent Negative Capacitance Effects in Al2O3/BaTiO3 Bilayers-Reference-Cited by-同舟云学术

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Time-Dependent Negative Capacitance Effects in Al2O3/BaTiO3 Bilayers

Published:2016-06-01 Issue:7 Volume:16 Page:4375-4381
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Kim Yu Jin¹,Yamada Hiroyuki²,Moon Taehwan¹,Kwon Young Jae¹,An Cheol Hyun¹,Kim Han Joon¹,Kim Keum Do¹,Lee Young Hwan¹,Hyun Seung Dam¹,Park Min Hyuk¹,Hwang Cheol Seong¹

Affiliation:

1. Department of Materials Science & Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Republic of Korea

2. National Institute of Advanced Industrial Science and Technology (AIST) and JST, PRESTO, Higashi 1-1-1, Tsukuba, Ibaraki 305-8562, Japan

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b01480

Reference31 articles.

1. Prospective of Semiconductor Memory Devices: from Memory System to Materials

2. Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory

3. Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

4. Negative capacitance in a ferroelectric capacitor

5. Emergence of Negative Capacitance in Multidomain Ferroelectric-Paraelectric Nanocapacitors at Finite Bias

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