Effect of zirconium or titanium component on electrical properties of PbZr1−xTixO3gated negative capacitance ferroelectric field-effect transistors-Reference-Cited by-同舟云学术

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Effect of zirconium or titanium component on electrical properties of PbZr1−xTixO3gated negative capacitance ferroelectric field-effect transistors

Published:2016-10-10 Issue:10 Volume:3 Page:105902
ISSN:2053-1591
Container-title:Materials Research Express
language:
Short-container-title:Mater. Res. Express

Author:

Xiao Y G,Wang J,Ma D B,Li Z,Tang M H

Funder

National Natural Science Foundation of China

Publisher

IOP Publishing

Subject

Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/2053-1591/3/i=10/a=105902/pdf

Reference26 articles.

1. Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

2. Analytic Model for the Surface Potential and Drain Current in Negative Capacitance Field-Effect Transistors

3. Multidomain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors

4. Modeling the Temperature Dependence of Fe-FET Static Characteristics Based on Landau's Theory

5. Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ferroelectric memory devices using hafnium aluminum oxides and remote plasma-treated electrodes for sustainable energy-efficient electronics;Materials Research Express;2024-04-01

2. Electrical characteristics investigation of ferroelectric memories using stacked and mixed hafnium zirconium oxides;Thin Solid Films;2022-09

3. Effect of capping layer on the ferroelectricity of hafnium oxide;Thin Solid Films;2022-07

4. A comparative study of metal-ferroelectric-metal devices using doped- and stacked-hafnium zirconium oxides;Thin Solid Films;2020-05

5. Investigation of Gate-Stress Engineering in Negative Capacitance FETs Using Ferroelectric Hafnium Aluminum Oxides;IEEE Transactions on Electron Devices;2019-02

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