Electrical characteristics investigation of ferroelectric memories using stacked and mixed hafnium zirconium oxides-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Electrical characteristics investigation of ferroelectric memories using stacked and mixed hafnium zirconium oxides

Published:2022-09 Issue: Volume:757 Page:139395
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Fang Yi-Wei,Yang Zih-Jing,Liao Ruo-Yin,Chen Pei-Tien,Liu Cun-Bo,Huang Kai-Yang,Hsu Hsiao-Hsuan,Cheng Chun-Hu,Chou Wu-Ching,Lin Shih-Hao,Zhou Ye

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Low-voltage steep turn-on p-mosfet using ferroelectric high-k gate dielectric;Cheng;IEEE Electron Device Lett.,2014

2. Low-leakage-current DRAM-like memory using a one-transistor ferroelectric MOSFET with a Hf-based gate dielectric;Cheng;IEEE Electron Device Lett.,2014

3. Investigation of gate stress engineering in negative capacitance fets using ferroelectric hafnium aluminum oxides;Cheng;IEEE Trans. Electron Devices,2019

4. Implementation of dopant-free hafnium-oxide negative capacitance field-effect transistor;Cheng;IEEE Trans. Electron Devices,2018

5. Investigation of strain-induced phase transformation in ferroelectric transistor using metal-nitride gate electrode;Chiu;Physica Status Solidi- Rapid Res. Lett.,2017

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent advances in memristors based on two-dimensional ferroelectric materials;Frontiers of Physics;2023-11-28

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP