Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation-Reference-Cited by-同舟云学术

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Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation

Published:2008-04 Issue:12 Volume:516 Page:4107-4110
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Oh Jungwoo,Majhi Prashant,Tseng Hsing-Huang,Jammy Raj,Kelly David Q.,Banerjee Sanjay K.,Campbell Joe C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Hafnium oxide gate dielectrics on sulfur-passivated germanium

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Front End of the Line Process;Atomic Layer Deposition for Semiconductors;2013-10-19

2. Interfacial layer reduction and high permittivity tetragonal ZrO2 on germanium reaching ultrathin 0.39 nm equivalent oxide thickness;Applied Physics Letters;2013-06-10

3. Physical and electrical properties of thermally oxidized dielectrics on Si-capped Ge-on-Si substrate;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-01

4. Thermal Endurance and Microstructural Evolution of PtGe for High-Performance Nano-Scale Ge-on-Si MOSFETs;Journal of Nanoscience and Nanotechnology;2011-07-01

5. Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors;MRS Bulletin;2009-07

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