Interfacial layer reduction and high permittivity tetragonal ZrO2 on germanium reaching ultrathin 0.39 nm equivalent oxide thickness
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4810934
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1. High-k/Ge MOSFETs for future nanoelectronics
2. Direct Comparison of ZrO2and HfO2on Ge Substrate in Terms of the Realization of Ultrathin High-κ Gate Stacks
3. Zirconia-germanium interface photoemission spectroscopy using synchrotron radiation
4. Strain response of high mobility germanium n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates
5. Ge MOSFETs performance: Impact of Ge interface passivation
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