Strain response of high mobility germanium n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3604417
Reference19 articles.
1. High-Mobility Ge N-MOSFETs and Mobility Degradation Mechanisms
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3. Role of germanium nitride interfacial layers in HfO2/germanium nitride/germanium metal-insulator-semiconductor structures
4. Activation and diffusion studies of ion-implanted p and n dopants in germanium
5. Ge (100) and (111) N- and P-FETs With High Mobility and Low-$T$ Mobility Characterization
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