Synthesis and optical properties of Sn-rich Ge1––Si Sn materials and devices-Reference-Cited by-同舟云学术

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Synthesis and optical properties of Sn-rich Ge1––Si Sn materials and devices

Published:2014-04 Issue: Volume:557 Page:177-182
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Xu Chi,Beeler Richard T.,Jiang Liying,Gallagher James D.,Favaro Ruben,Menéndez José,Kouvetakis John

Funder

US Air Force Office for Scientific Research

Air Force Research Laboratory

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Band structure and instability of Ge1−xSnx alloys

2. Ge–Sn semiconductors for band-gap and lattice engineering

3. Molecular beam epitaxy of metastable, diamond structure SnxGe1−xalloys

4. Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6

5. Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Infrared optical properties of SiGeSn and GeSn layers grown by molecular beam epitaxy;Journal of Vacuum Science & Technology B;2024-09-01

2. Synthesis of High Sn Content Ge_1–x–ySi_xSn_y (0.1 < y < 0.22) Semiconductors on Si for MWIR Direct Band Gap Applications;ACS Applied Materials & Interfaces;2023-10-06

3. Novel Group-IV Alloy-Based MOS Field-Effect Phototransistors for Near-Infrared Applications;IEEE Sensors Journal;2023-08-01

4. Micrometer-thick, atomically random Si_0.06Ge_0.90Sn_0.04 for silicon-integrated infrared optoelectronics;Journal of Applied Physics;2022-11-21

5. First-principles study of electronic structure and optical and mechanical properties of SiGeSn alloy;International Journal of Modern Physics B;2022-04-18

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