Charge trapping induced frequency-dependence degradation in n-MOSFETs with high-k/metal gate stacks-Reference-Cited by-同舟云学术

Charge trapping induced frequency-dependence degradation in n-MOSFETs with high-k/metal gate stacks

Published:2011-12 Issue:5 Volume:520 Page:1511-1515
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Dai Chih-Hao,Chang Ting-Chang,Chu Ann-Kuo,Kuo Yuan-Jui,Hung Ya-Chi,Lo Wen-Hung,Ho Szu-Han,Chen Ching-En,Shih Jou-Miao,Chung Wan-Lin,Chen Hua-Mao,Dai Bai-Shan,Tsai Tsung-Ming,Xia Guangrui,Cheng Osbert,Huang Cheng Tung

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

2. On the Origin of Gate-Induced Floating-Body Effect in PD SOI p-MOSFETs

3. and Cheng Tung Huang;Dai;IEEE Electron Device Letters,2010

4. and Cheng Tung Huang;Dai;Appl. Phys. Lett.,2011

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