Anomalous Gate Current Hump after Dynamic Negative Bias Stress and Negative-Bias Temperature-Instability in p-MOSFETs with HfxZr1−xO2and HfO2/Metal Gate Stacks-Reference-Cited by-同舟云学术

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Anomalous Gate Current Hump after Dynamic Negative Bias Stress and Negative-Bias Temperature-Instability in p-MOSFETs with HfxZr1−xO2and HfO2/Metal Gate Stacks

Published:2013 Issue:9 Volume:2 Page:Q187-Q191
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Ho Szu-Han,Chang Ting-Chang,Wu Chi-Wei,Lo Wen-Hung,Chen Ching-En,Tsai Jyun-Yu,Chen Hua-Mao,Liu Guan-Ru,Tseng Tseung-Yuen,Cheng Osbert,Huang Cheng-Tung,Chen Daniel,Sze Simon M.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Substrate current enhancement in 65 nm metal-oxide-silicon field-effect transistor under external mechanical stress

2. Temperature-Dependent Biaxial Compressive Strain Effect on p-MOSFETs

3. Enhanced gate-induced floating-body effect in PD SOI MOSFET under external mechanical strain

4. On the Origin of Gate-Induced Floating-Body Effect in PD SOI p-MOSFETs

5. Impact of Mechanical Strain on GIFBE in PD SOI p-MOSFETs as Indicated From NBTI Degradation

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