Extension of Far UV spectroscopic ellipsometry studies of High-κ dielectric films to 130 nm-Reference-Cited by-同舟云学术

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Extension of Far UV spectroscopic ellipsometry studies of High-κ dielectric films to 130 nm

Published:2011-02 Issue:9 Volume:519 Page:2894-2898
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Kamineni Vimal K.,Hilfiker James N.,Freeouf John L.,Consiglio Steve,Clark Robert,Leusink Gert J.,Diebold Alain C.

Funder

KLA-Tencor

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Advanced high-κ dielectric stacks with polySi and metal gates: Recent progress and current challenges

2. Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing

3. High temperature stability in lanthanum and zirconia-based gate dielectrics

4. Characteristics of electron-beam-gun-evaporated Er2O3 thin films as gate dielectrics for silicon

5. Epitaxial praseodymium oxide: a new high-K dielectric

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2. Charge transient behaviour and spectroscopic ellipsometry characteristics of TiN/HfSiO MOS capacitors;The European Physical Journal Applied Physics;2018-07

3. New dispersion model for band gap tracking;Thin Solid Films;2015-11

4. Modified Tauc–Lorentz dispersion model leading to a more accurate representation of absorption features below the bandgap;Thin Solid Films;2015-08

5. Quantitative characterization and modeling of sub-bandgap absorption features in thin oxide films from spectroscopic ellipsometry data;AIMS Materials Science;2015

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