Dry etching of copper thin films in high density plasma of CH3COOH/Ar-Reference-Cited by-同舟云学术

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Dry etching of copper thin films in high density plasma of CH3COOH/Ar

Published:2019-02 Issue: Volume:672 Page:55-61
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Ryu Jin Su,Lim Eun Taek,Choi Jae Sang,Chung Chee Won

Funder

MOTIEMOTIE (Ministry of Trade, Industry & Energy)

KSRC

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Chlorine plasma/copper reaction in a new copper dry etching process;Lee;J. Electrochem. Soc.,2001

2. Cu-CMP for dual damascene technology;Gotkis;J. Electron. Mater.,2001

3. Overview of dual damascene integration schemes in Cu BEOL integration;Kriz;Microelectron. Eng.,2008

4. Reactive ion etching of copper in SiCl4-based plasmas;Howard;Appl. Phys. Lett.,1991

5. Copper dry etching with Cl2/Ar plasma chemistry;Lee;J. Electrochem. Soc.,1998

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