Cu-CMP for dual damascene technology: Prestonian vs. non-prestonian regimes of Cu removal-Reference-Cited by-同舟云学术

Cu-CMP for dual damascene technology: Prestonian vs. non-prestonian regimes of Cu removal

Published:2001-04 Issue:4 Volume:30 Page:396-399
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Gotkis Y.,Guha S.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-001-0050-y.pdf

Reference6 articles.

1. D.C. Edelstein, Advantages of Copper Interconnects 1995 VMIC (1995).

2. Y. Gotkis, S. Alamgir, L. Yang, F. Dai, F. Mitchell, J. Nguyen, L. Shumway, L. R. Walesa, J. Yang, P. Nunan, and K. Holland, JVST (B) 17, 2262 (1999).

3. J Steigerwald, S. Murarka, and R. Gutmann, Chem. Mech. Polishing of Microelectron. Mater, (New York: Wiley & Sons, 1997).

4. R. Carpio, J. Farkas, and R. Jairath, Thin Solid Films 266, 238 (1995).

5. Q. Luo and S.V. Babu, Proc. 1997 VMIC Conf. 1997 (1997).

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