The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures-Reference-Cited by-同舟云学术

The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures

Published:2012-02 Issue:8 Volume:520 Page:3326-3331
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Hellings Geert,Hikavyy Andriy,Mitard Jerome,Witters Liesbeth,Benbakhti Brahim,Alian AliReza,Waldron Niamh,Bender Hugo,Eneman Geert,Krom Raymond,Schulze Andreas,Vandervorst Wilfried,Loo Roger,Heyns Marc,Meuris Marc,Hoffmann Thomas,De Meyer Kristin

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. IEEE International Electron Devices Meeting — IEDM;Wu,2010

2. IEEE International Electron Devices Meeting — IEDM;Ok,2010

3. IEEE International Electron Devices Meeting — IEDM;Faynot,2010

4. G. Hellings, G. Eneman, M. Meuris, US Patent no. 7,915,608 B2 2011.

5. IEEE International Electron Devices Meeting — IEDM;Hellings,2010

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Scalability comparison between raised- and embedded-SiGe source/drain structures for Si 0.55 Ge 0.45 implant free quantum well pFET;Microelectronics Reliability;2018-04

2. Processing Technologies for Advanced Ge Devices;ECS Journal of Solid State Science and Technology;2016-12-05

3. Band offsets for biaxially and uniaxially stressed silicon-germanium layers with arbitrary substrate and channel orientations;Journal of Applied Physics;2016-08-07

4. Si1-yGeyor Ge1-zSnzSource/Drain Stressors on Strained Si1-xGex-Channel P-Type Field-Effect Transistors: A Technology Computer-Aided Design Study;Japanese Journal of Applied Physics;2013-04-01

5. A comprehensive model for the electrical nanocontact on germanium for scanning spreading resistance microscopy applications;Journal of Applied Physics;2013-03-21