Si1-yGeyor Ge1-zSnzSource/Drain Stressors on Strained Si1-xGex-Channel P-Type Field-Effect Transistors: A Technology Computer-Aided Design Study-Reference-Cited by-同舟云学术

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Si1-yGeyor Ge1-zSnzSource/Drain Stressors on Strained Si1-xGex-Channel P-Type Field-Effect Transistors: A Technology Computer-Aided Design Study

Published:2013-04-01 Issue:4S Volume:52 Page:04CC01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Eneman Geert,Keersgieter An De,Witters Liesbeth,Mitard Jerome,Vincent Benjamin,Hikavyy Andriy,Loo Roger,Horiguchi Naoto,Collaert Nadine,Thean Aaron

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference27 articles.

1. The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures

2. (Invited) Stress Techniques in Advanced Transistor Architectures: Bulk FinFETs and Implant-Free Quantum Well Transistors

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive effects of strained Ge 1−x Sn x and device layout arrangement on a nano-scale Ge-based PMOSFET with a short channel;Materials Science in Semiconductor Processing;2017-11

2. Processing Technologies for Advanced Ge Devices;ECS Journal of Solid State Science and Technology;2016-12-05

3. (Invited) Processing Technologies for Advanced Ge Devices;ECS Transactions;2016-08-18

4. Performance Investigation of Nanoscale Strained Ge pMOSFETs with a GeSn Alloy Stressor;Journal of Nanoscience and Nanotechnology;2015-11-01

5. Comparison between experimental and simulated strain profiles in Ge channels with embedded source/drain stressors;physica status solidi (c);2014-07-25

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