Parameter extraction using novel phenomena in nano-MOSFETs with ultra-thin (EOT=0.46–1.93 nm) high-K gate dielectrics-Reference-Cited by-同舟云学术

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Parameter extraction using novel phenomena in nano-MOSFETs with ultra-thin (EOT=0.46–1.93 nm) high-K gate dielectrics

Published:2006-05 Issue:1-2 Volume:504 Page:178-182
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Kar Samares

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. MOS (Metal–Oxide–Semiconductor) Physics and Technology;Nicollian,1982

2. Physics and Technology of High-K Gate Dielectrics: I, PV 2002-28,2002

3. Physics and Technology of High-K Gate Dielectrics: II, PV 2003-22,2003

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1. Electrical characteristics of multilayered HfO2-Al2O3 charge trapping stacks deposited by ALD;Journal of Physics: Conference Series;2016-10

2. On the Characteristics of Traps and Charges in the Si/SiO2/HfO2/TaN High-k Gate Stacks;ECS Journal of Solid State Science and Technology;2013-12-24

3. Nature of Interface Traps in Si/SiO2/HfO2 /TiN Gate Stacks and its Correlation with the Flat-band Voltage Roll-off;ECS Transactions;2009-09-25

4. Extraction of Trap Parameters for High-Κ Gate Stacks;ECS Transactions;2008-10-03

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