Extraction of Trap Parameters for High-Κ Gate Stacks

Author:

Kar Samares,Rawat S.

Abstract

A small-signal steady state admittance technique, containing some new approaches, is outlined in this paper, for the extraction of the trap parameters, such as the trap density, the trap-energy, and the trap-capture-cross-section/trap-location in the direction perpendicular to the interface, for high-K gate stacks. This technique also yields the experimental values of the total gate-dielectric-stack capacitance, the flat-band voltage, and the surface potential. This technique is applied to p-Si/SiO2/HfO2/TaN MOS capacitors, and the results are presented and analyzed.

Publisher

The Electrochemical Society

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. On the Characteristics of Traps and Charges in the Si/SiO2/HfO2/TaN High-k Gate Stacks;ECS Journal of Solid State Science and Technology;2013-12-24

2. MOSFET: Basics, Characteristics, and Characterization;High Permittivity Gate Dielectric Materials;2013

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