On the Characteristics of Traps and Charges in the Si/SiO2/HfO2/TaN High-k Gate Stacks
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference32 articles.
1. Anomalous VFB Shift in High-k Gate Stacks - Is its Origin at the Top or Bottom Interface ? -
2. Origin of electric dipoles formed at high-k/SiO2 interface
3. Engineering High Dielectric Constant Materials for Band-Edge CMOS Applications
4. Contributions to the effective work function of platinum on hafnium dioxide
5. Oxygen-vacancy-induced threshold voltage shifts in Hf-related high-k gate stacks
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical characterization of a single-crystalline Si quantum well formed by thermal oxidation of ultrathin silicon-on-insulator film (Al/SiO2:c-Si QW/n-Si) for optoelectronic applications;Applied Physics A;2024-06
2. Different Dielectrics for Source, Drain and Channel Regions of 1D Nanowire MOSFETs and TFETs;ECS Journal of Solid State Science and Technology;2018
3. Carrier scattering in high-κ/metal gate stacks;Journal of Applied Physics;2017-03-21
4. Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure;Materials Chemistry and Physics;2016-12
5. Interface state density engineering in Hf1-xZrxO2/SiON/Si gate stack;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3