Anomalous VFB Shift in High-k Gate Stacks - Is its Origin at the Top or Bottom Interface ? -

Abstract

Metal/high-k gate stack technology is now about to be in production. However, there are so many issues which have not been understood yet. VTH control is the most serious concern for high performance and low power CMOS application. In this paper, our understandings of anomalous VFB shift observed in high-k gate stacks is presented from the viewpoint of dipole formation at high-k interface.