Study of temperature dependence of positive charge generation in thin dielectric film of MOS structure under high-fields

Author:

Bondarenko G.G.,Andreev V.V.,Drach V.E.,Loskutov S.A.,Stolyarov M.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Investigation of Factors, Affecting the Behaviour of Id–Vg Shift in MOSFET;2024 6th International Youth Conference on Radio Electronics, Electrical and Power Engineering (REEPE);2024-02-29

2. Self-Compensation Effect of Photo-Bias Instabilities in a-InGaZnO Thin-Film Transistors Induced by Unique Ion Migration;IEEE Transactions on Electron Devices;2022-06

3. INFLUENCE OF TEMPERATURE ON HIGH-FIELD INJECTION MODIFICATION OF MIS STRUCTURES WITH THERMAL SiO2 FILMS DOPED WITH PHOSPHORUS;High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes;2019

4. Modification of MIS structures by electron irradiation and high-field electron injection;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2016-03

5. Charge characteristics of MOS structure with thermal SiO2 films doped with phosphorus under high-field electron injection;Inorganic Materials: Applied Research;2016-03

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