Structural and optical studies of strain relaxation in Ge1−xSnx layers grown on Ge/Si(001) by molecular beam epitaxy

Author:

Nikolenko A.S.,Strelchuk V.V.,Safriuk N.V.,Kryvyi S.B.,Kladko V.P.,Oberemok O.S.,Borkovska L.V.,Sadofyev Yu.G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference34 articles.

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3. Optical critical points of thin-film Ge1.ySny alloys: A comparative Ge1−ySny/Ge1−xSix study;D'Costa;Phys. Rev. B,2006

4. Origin of the unusually large band-gap bowing and the breakdown of the band-edge distribution rule in the SnxGe1−x alloys;Yin;Phys. Rev. B,2008

5. Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon;Mathews;Appl. Phys. Lett.,2010

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