Effect of substrate temperature on the morphological, structural, and optical properties of RF sputtered Ge 1− x Sn x films on Si substrate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/26/5/056801/pdf
Reference36 articles.
1. Lasing in direct-bandgap GeSn alloy grown on Si
2. Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates
3. Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes
4. Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection
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1. Evaluation of electricity generation on GeSn single‐junction solar cell;International Journal of Energy Research;2022-05-24
2. Evaluation of crystallinity of lattice-matched Ge/GeSiSn heterostructure by Raman spectroscopy;Thin Solid Films;2021-05
3. Effects of Low-Temperature GeSn Buffer Layers on Sn Surface Segregation During GeSn Epitaxial Growth;Electronic Materials Letters;2019-11-14
4. A hybrid functional first-principles study on the band structure of non-strained Ge 1− x Sn x alloys;Chinese Physics B;2017-12
5. Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate;Chinese Physics B;2017-10
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