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The influence of concentration of hydroxyl radical on the chemical mechanical polishing of SiC wafer based on the Fenton reaction

  • Published:2018-04 Issue: Volume:52 Page:221-226
  • ISSN:0141-6359
  • Container-title:Precision Engineering
  • language:en
  • Short-container-title:Precision Engineering

Author:

Lu Jiabin,Chen Run,Liang Huazhuo,Yan Qiusheng

Funder

National Natural Science Foundation of China

Key Project of the Natural Science Foundation of Guangdong Province

Science and Technology Project of Guangzhou City

Publisher

Elsevier BV

Subject

General Engineering

Reference23 articles.

1. Emerging silicon carbide power electronics components;Zolper;20th Annual IEEE Applied Power Electronics Conference (APEC 2005),2005

2. High throughput SiC wafer polishing with good surface morphology;Kato;Mater Sci Forum,2007

3. Research on reaction method of high removal rate chemical mechanical polishing slurry for 4H-SiC substrate;Nitta;Jpn J Appl Phys,2011

4. Novel abrasive-free planarization of 4H-SiC (0001) using catalyst;Hara;J Electron Mater,2006

5. Chemomechanical polishing of silicon carbide;Zhou;J Electrochem Soc,1997
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