Research on Reaction Method of High Removal Rate Chemical Mechanical Polishing Slurry for 4H-SiC Substrate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference10 articles.
1. Elimination of SiC/SiO2 interface states by preoxidation ultraviolet‐ozone cleaning
2. 4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness
3. Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate
4. Chemomechanical Polishing of Silicon Carbide
5. Influence of Structural Defects on the Polishing of Silicon Carbide Single Crystal Wafers
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1. Microscopic removal mechanism of 4 H-SiC during abrasive scratching in aqueous H2O2 and H2O: Insights from ReaxFF molecular dynamics;Tribology International;2024-12
2. Removal mechanism on 4H–SiC single crystal by picosecond laser ablation-assisted chemical mechanical polishing (CMP);Ceramics International;2024-04
3. Study on OH radical oxidation of 4H-SiC in plasma based on ReaxFF molecular dynamics simulation;Journal of Molecular Liquids;2024-04
4. Study on Ceria Slurry for Chemical Mechanical Polishing of 4H-SiC;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17
5. Compound mechanical and chemical-mechanical polishing processing technique for single-crystal silicon carbide;Precision Engineering;2024-03
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