A silicon pressure sensor using mos ring oscillators
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference9 articles.
1. Mobility anisotropy and piezoresistance in silicon p-type inversion layers;Coleman;J. Appl. Phys.,1968
2. The effect of strain on MOS transistors;Dorey;Solid-State Electron,1969
3. A igh sensitivity semiconductor strain sensitive circuit;Dorey;Solid-State Electron,1975
4. Piezoresistivity effects in MOS-FET useful for pressure transducers;Canali;J. Phys. D.,1979
5. Stress-sentivive properties of silicon-gate MOS devices;Mikoshiba;Solid-State Electron.,1981
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