Piezoresistivity effects in MOS-FET useful for pressure transducers-Reference-Cited by-同舟云学术

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Piezoresistivity effects in MOS-FET useful for pressure transducers

Published:1979-11-14 Issue:11 Volume:12 Page:1973-1983
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Canali C,Ferla F,Morten B,Taroni A

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/12/i=11/a=025/pdf

Reference11 articles.

1. Mobility Anisotropy and Piezoresistance in Siliconp‐Type Inversion Layers

2. Piezoresistance in Quantized Conduction Bands in Silicon Inversion Layers

3. Band Structure Investigation on p-Type Silicon Inversion Layers by Piezoresistance and Mobility Measurements

4. The effect of strain on MOS transistors

5. The low temperature strain sensitivity of MOS transistors

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2. Development of a current mirror-integrated pressure sensor using CMOS-MEMS cofabrication techniques;Microelectronics International;2018-10-01

3. Characterisation of MOS Transistors as an Electromechanical Transducer for Stress;physica status solidi (a);2018-01-10

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