Characterisation of MOS Transistors as an Electromechanical Transducer for Stress-Reference-Cited by-同舟云学术

Characterisation of MOS Transistors as an Electromechanical Transducer for Stress

Published:2018-01-10 Issue:19 Volume:216 Page:1700680
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Hafez Nessma¹^ORCID,Haas Sven²^ORCID,Loebel Kay‐Uwe¹,Reuter Danny²³,Ramsbeck Marco¹,Schramm Michael⁴,Horstmann John Thomas¹,Otto Thomas²³

Affiliation:

1. Department of Electronic Devices of Micro and Nano Technique09126 ChemnitzGermany

2. Centre for Microtechnologies (ZFM)TU Chemnitz09107 ChemnitzGermany

3. Frauenhofer Institute for Electronic Nanosystems (ENAS)09126 ChemnitzGermany

4. EDC Electronic Design Chemnitz GmbHTechnologie‐Campus 409126 ChemnitzGermany

Funder

German research Foundation

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201700680

Reference41 articles.

1. Theory of the Piezo-Resistive Effect

2. Piezoresistance in Quantized Conduction Bands in Silicon Inversion Layers

3. Band Structure Investigation on p-Type Silicon Inversion Layers by Piezoresistance and Mobility Measurements

4. A high sensitivity semiconductor strain sensitive circuit

5. Stress-sensitive properties of silicon-gate MOS devices

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