Development of Highly Sensitive and Thermostable Microelectromechanical System Pressure Sensor Based on Array-Type Aluminum–Silicon Hybrid Structures

Abstract

In order to meet the better performance requirements of pressure detection, a microelectromechanical system (MEMS) piezoresistive pressure sensor utilizing an array-type aluminum–silicon hybrid structure with high sensitivity and low temperature drift is designed, fabricated, and characterized. Each element of the 3 × 3 sensor array has one stress-sensitive aluminum–silicon hybrid structure on the strain membrane for measuring pressure and another temperature-dependent structure outside the strain membrane for measuring temperature and temperature drift compensation. Finite-element numerical simulation has been adopted to verify that the array-type pressure sensor has an enhanced piezoresistive effect and high sensitivity, and then this sensor is fabricated based on the standard MEMS process. In order to further reduce the temperature drift, a thermodynamic control system whose heating feedback temperature is measured by the temperature-dependent structure is adopted to keep the working temperature of the sensor constant by using the PID algorithm. The experiment test results show that the average sensitivity of the proposed sensor after temperature compensation reaches 0.25 mV/ (V kPa) in the range of 0–370 kPa, the average nonlinear error is about 1.7%, and the thermal sensitivity drift coefficient (TCS) is reduced to 0.0152%FS/°C when the ambient temperature ranges from −20 °C to 50 °C. The research results may provide a useful reference for the development of a high-performance MEMS array-type pressure sensor.