Inductively coupled plasma reactive ion etching of titanium nitride thin films in a Cl2/Ar plasma
Author:
Publisher
Elsevier BV
Subject
General Chemical Engineering
Reference8 articles.
1. Angular resolved x‐ray photoelectron spectroscopy study of reactively sputtered titanium nitride
2. Dry etching of titanium nitride thin films in CF4–O2 plasmas
3. Performance of different etch chemistries on titanium nitride antireflective coating layers and related selectivity and microloading improvements for submicron geometries obtained with a high-density metal etcher
4. Characterization of titanium nitride etch rate and selectivity to silicon dioxide in a Cl2 helicon-wave plasma
5. High-Density Plasma Etching of Iridium Thin Films in a Cl[sub 2]/O[sub 2]/Ar Plasma
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1. Nanometer – Thick titanium film as a silicon migration barrier;Materials Today Communications;2024-08
2. Etching characteristics and surface modification of InGaSnO thin films under Cl2/Ar plasma;Plasma Science and Technology;2023-06-27
3. Thermal gas-phase etching of titanium nitride (TiN) by thionyl chloride (SOCl2);Applied Surface Science;2021-02
4. A characteristic improved technique and analysis with plasma treatment to the electrode on oxide-based resistive random access memory;Journal of Alloys and Compounds;2020-03
5. Insertion of Ag Layer in TiN/SiNx/TiN RRAM and Its Effect on Filament Formation Modeled by Monte Carlo Simulation;IEEE Access;2020
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