A susceptor with partial-torus groove in vertical MOCVD reactor by induction heating-Reference-Cited by-同舟云学术

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A susceptor with partial-torus groove in vertical MOCVD reactor by induction heating

Published:2014-08 Issue: Volume:75 Page:410-413
ISSN:0017-9310
Container-title:International Journal of Heat and Mass Transfer
language:en
Short-container-title:International Journal of Heat and Mass Transfer

Author:

Li Zhiming,Li Hailing,Zhang Jincheng,Li Jinping,Jiang Haiying,Fu Xiaoqian,Han Yanbin,Xia Yingjie,Huang Yimei,Yin Jianqin,Zhang Lejuan,Hu Shigang

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Fluid Flow and Transfer Processes,Mechanical Engineering,Condensed Matter Physics

Reference21 articles.

1. High growth rate MOVPE of Al(Ga)N in planetary reactor;Lundin;J. Cryst. Growth,2012

2. Semibulk InGaN: a novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE;Pantzas;J. Cryst. Growth,2013

3. MOVPE growth of Ga(AsBi)/GaAs multi quantum well structures;Ludewig;J. Cryst. Growth,2013

4. Yellow luminescence of polar and non polar GaN nanowires on r-plane sapphire by metal organic chemical vapor deposition;Xu;Nano Lett.,2013

5. Integration of CFD and Nelder–Mead algorithm for optimization of MOCVD process in an atmospheric pressure vertical rotating disk reactor;Abedi;Int. Commun. Heat Mass Transfer,2013

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2. Numerical Analysis of a High-Pressure Spatial Chemical Vapor Deposition (HPS-CVD) Reactor for Flow Stability at High Pressures;Crystals;2024-04-18

3. Computational Fluid Dynamic Analysis of a High-Pressure Spatial Chemical Vapor Deposition (HPS-CVD) Reactor for Flow Stability;Crystals;2024-01-23

4. Quantum chemical calculation and growth process of Ga₂O₃ grown via TEGa under different oxygen sources in MOCVD;CrystEngComm;2023

5. A simulation and experimental study of the parasitic reaction and flow field in the growth of metal–oxide films;Ceramics International;2022-09

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