Quantum chemical calculation and growth process of Ga<sub>2</sub>O<sub>3</sub> grown <i>via</i> TEGa under different oxygen sources in MOCVD-Reference-Cited by-同舟云学术

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Quantum chemical calculation and growth process of Ga₂O₃ grown via TEGa under different oxygen sources in MOCVD

Published:2023 Issue:19 Volume:25 Page:2925-2938
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Wang Jie¹,Luo Tie-cheng¹,Yang Zhuo¹,He Yi-cong¹,Li Jian²,Wang Gang¹³^ORCID

Affiliation:

1. School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 51000, China

2. School of AI-Guangdong & Taiwan, Foshan University, Foshan 528225, China

3. State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou 510275, China

Abstract

The chemical reaction pathway and growth process of Ga2O3 grown via TEGa and H2O/O2/N2O in MOCVD were investigated.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CE/D3CE00310H

Reference29 articles.

1. ε‐Ga2O3Thin Film Avalanche Low‐Energy X‐Ray Detectors for Highly Sensitive Detection and Fast‐Response Applications

2. First demonstration of hetero-epitaxial ε-Ga2O3 MOSFETs by MOCVD and a F-plasma surface doping

3. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

4. Organometallic vapor phase epitaxy (OMVPE)

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1. Chemical reaction-mass transport model of Ga2O3 grown by TEGa in MOCVD and an intelligent system;Journal of Crystal Growth;2023-09

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