High growth rate MOVPE of Al(Ga)N in planetary reactor-Reference-Cited by-同舟云学术

High growth rate MOVPE of Al(Ga)N in planetary reactor

Published:2012-08 Issue:1 Volume:352 Page:209-213
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lundin W.V.,Nikolaev A.E.,Yagovkina M.A.,Brunkov P.N.,Rozhavskaya M.M.,Ber B.Ya.,Kazantsev D.Yu.,Tsatsulnikov A.F.,Lobanova A.V.,Talalaev R.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

1. Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on silicon substrates

2. Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

3. Dependence of the growth rate of an AlN layer on nitrogen pressure in a reactor for sublimation growth of AlN crystals

4. T.Yu. Chemekova, O.V. Avdeev, S.S. Nagalyuk, E.N. Mokhov, Yu.N. Makarov in: Proceedings of the Abstracts of the 5th All-Russia Conference on Gallium, Indium, and Aluminum Nitrides: Structures and Devices, Moscow, 2010, p. 25.

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