Far infrared spectroscopy of thin epitaxial layers of GaN deposited by molecular beam epitaxy on GaP substrates-Reference-Cited by-同舟云学术

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Far infrared spectroscopy of thin epitaxial layers of GaN deposited by molecular beam epitaxy on GaP substrates

Published:1996-04 Issue:3 Volume:37 Page:389-394
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Mirjalili G.,Dumelow T.,Parker T.J.,Farjami Shayesteh S.,Cheng T.S.,Foxon C.T.,Jenkins L.C.,Lacklinson D.E.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. High‐responsivity photoconductive ultraviolet sensors based on insulating single‐crystal GaN epilayers

2. Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPE

3. Observation of a two‐dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN‐AlxGa1−xN heterojunctions

4. GaN, AlN, and InN: A review

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Polarized infrared reflectance study of free standing cubic GaN grown by molecular beam epitaxy;Materials Chemistry and Physics;2014-07

2. Anisotropy of the momentum matrix element, dichroism, and conduction-band dispersion relation of wurtzite semiconductors;Physical Review B;2008-07-16

3. Polarized infrared reflectance study of wurtzite GaN thin film: The effects of angle of incidence on the optical phonon modes;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2007-11

4. High carrier concentrations of n- and p-doped GaN on Si(111) by nitrogen plasma-assisted molecular-beam epitaxy;Journal of Materials Research;2007-09

5. Far-infrared characterization of GaN epilayers;SPIE Proceedings;2001-03-08

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