Polarized infrared reflectance study of free standing cubic GaN grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference71 articles.
1. Polarized GaN-based light-emitting diode with an embedded metallic/dielectric subwavelength grating
2. Antireflection-coated blue GaN laser diodes in an external cavity and Doppler-free indium absorption spectroscopy
3. The characteristics of different transparent electrodes on GaN photodetectors
4. GaN-based FETs using Cat-CVD SiN passivation for millimeter-wave applications
5. Piezoelectric GaN sensor structures
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2. Influence of the free-electron concentration on the optical properties of zincblende GaN up to 1×1020cm−3;Physical Review Materials;2019-10-18
3. Optoelectronic properties of cubic BxInyGa1−x−yN alloys matched to GaN for designing quantum well Lasers: First-principles study within mBJ exchange potential;Materials Science in Semiconductor Processing;2015-08
4. ZnGeN2 and ZnGeN2:Mn2+ phosphors: hydrothermal-ammonolysis synthesis, structure and luminescence properties;Journal of Materials Chemistry C;2015
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