Reactive force-field molecular dynamics simulation for the surface reaction of SiH (x = 2–4) species on Si(1 0 0)-(2 × 1):H surfaces in chemical vapor deposition processes-Reference-Cited by-同舟云学术

Reactive force-field molecular dynamics simulation for the surface reaction of SiH (x = 2–4) species on Si(1 0 0)-(2 × 1):H surfaces in chemical vapor deposition processes

Published:2022-03 Issue: Volume:204 Page:111193
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Uene Naoya,Mabuchi Takuya,Zaitsu Masaru,Yasuhara Shigeo,Tokumasu Takashi

Funder

Japan Society for the Promotion of Science

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference50 articles.

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3. Low-temperature deposition of μc-Si : H thin films by a low-frequency inductively coupled plasma for photovoltaic applications;Wei;J. Phys. D Appl. Phys.,2013

4. Science and technology of plasma-enhanced chemical vapor deposition for high-efficiency silicon solar cells;Shirai;J. Plasma Fusion Res.,2015

5. Defect formation during growth of hydrogenated amorphous silicon;Ganguly;Phys. Rev. B.,1993

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