Growth of three-dimensional SiC clusters on Si modelled by KMC-Reference-Cited by-同舟云学术

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Growth of three-dimensional SiC clusters on Si modelled by KMC

Published:2005-04 Issue:1-3 Volume:33 Page:375-381
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Schmidt A.A.,Kharlamov V.S.,Safonov K.L.,Trushin Yu.V.,Zhurkin E.E.,Cimalla V.,Ambacher O.,Pezoldt J.

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference23 articles.

1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

2. Initial stages in the carbonization of (111)Si by solid-source molecular beam epitaxy

3. Lateral alignment of SiC dots on Si

4. Kinetic Monte Carlo simulation of SiC nucleation on Si(111)

5. Theory of Radiation Processes in Metal Solid Solutions;Trushin,1996

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1. Study on three-dimensional critical nucleation on a planar substrate of 3C-SiC crystal;Journal of Crystal Growth;2023-06

2. Anomalous dewetting growth of Si on Ag(111);Nanoscale;2022

3. A multiscale model for CVD growth of silicon carbide;Computational Materials Science;2021-08

4. Combined Density Functional Theory and Microkinetics Study to Predict Optimum Operating Conditions of Si(100) Surface Carbonization by Acetylene for High Power Devices;The Journal of Physical Chemistry Letters;2021-05-10

5. Epitaxial growth of 3C-SiC (111) on Si via laser CVD carbonization;Journal of Asian Ceramic Societies;2019-06-19

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